InN thin films show transient Pauli blocking for broadband ultrafast optical switching

Recent decades have witnessed rapid advancements in high-intensity laser technology. The combination of laser irradiation and novel materials is opening exciting avenues for the design of functional materials and devices. Semiconductors are ideal platforms for generating laser-driven functionalities because they can exhibit novel features such as ultrafast optical transparency. This effect arises from electronic occupation redistribution driven by ultrafast excitation, which manifests as a phenomenon called transient Pauli blocking.